Nanohub Tools

NCN at Illinois Tools

A list of tools supported by NCN@Illinois.

NCN@Illinois Supported Educational Tools

Effect of Doping on Semiconductors

This tool is meant to complement the Solid State Electronic Devices Class at the University of Illinois at Urbana-Champaign.

Illinois Solid State Electronic Devices Classes Tools

This tool allows users to visualize the effects of doping on carrier concentration in bulk silicon.

NanoGromacs_Intro

Implementation of the popular molecular dynamics software suite GROMACS.

nanoJoule

This tool performs a self-consistent simulation of the current-voltage curve of a metallic single-wall carbon nanotube with Joule heating.

PN Junction Long-Base Depletion Approximation

Depletion Approximation for a PN Junction.

Illinois Tools: PN Junction Short-Base Depletion Approximation

This model is valid under the assumption that the width of the n-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers.

NCN@Illinois Supported Research Tools

BioMOCA Suite

Simulates ion flow through a channel.

Boltzmann Transport Simulator for CNTs

Simulate Electron transport in Single-walled carbon nanotubes using an upwinding discretization of the Boltzmann transport equation in the relaxation time approximation.

Carbon nanotube based fixed-fixed NEMS

Simulates pull-in behavior of Carbon nanotube based NEMS with fixed-fixed boundary conditions, with and without Vander Waal's effect.

Carbon nanotube based NEMS with cantilever structure

Simulates pull-in behavior of Carbon nanotube based NEMS with cantilever boundary conditions, with and without Vander Waal's effect.

Other Tools

BioMOCA

Ion channel simulator.

Bulk GaAs Ensemble Monte Carlo

Basic Ensemble Monte Carlo code for study of electron transport in bulk GaAs.

CENEMS

Computes the surface charge density distribution on the surface of the conductors in a multiconductor system.

CGTB

Compute the charge density distribution and potential variation inside a MOS structure.

CNT Mobility

Simulate field effect carrier mobility in back-gated CNTFET devices at low field.

CNTphonons

Calculates the phonon band structure of carbon nanotubes using the force constant method.

Cyber-Infrastructure for Imaging and Simulation of Molecular and Cellular Mechanics (CISMCM)

A simulation-driven science project to understand the inner workings of cellular structures and biological systems, and to design detection and manipulation devices for a wide range of applications in nano-medicine and nano-biotechnology.

FIONA

Fluorescence Imaging with One Nanometer Accuracy.

Illinois ABE 446 Lecture 1: Introduction/What is nanotechnology?

A brief introduction to nanotechnology, from a bio-nano perspective.

Illinois ECE 440: Solid State Electronic Devices

The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

Illinois ECE 440: Solid State Electronic Devices Homework Assignments (Fall 2009)

Homework assignments for the Fall 2009 teaching of Illinois ECE 440: Solid State Electronic Devices.

Illinois Tools: Basic Bulk Silicon Transport Data at 300K

This module calculates the transport data of impurity-doped silicon at 300K in order to enhance the learning experiences for those studying introductory Solid State Devices.

Illinois Tools: MOCA

2D Full-band Monte Carlo Simulation of SOI Device Structures.

Illinois Tools: Multigrid Tutorial

Solve the 2d Poisson Equation on a unit square and explore the effect of different parameters on the convergence and quality of solution.

imageJ

imageJ can display, edit, analyze, process, save and print 8-bit, 16-bit and 32-bit images. It can read many image formats.

NP Junction: Short-Base Depletion Approximation

This model is valid under the assumption that the width of the p-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers.

Low Field Mobility

Calculates low field mobility in III-V semiconductors.

Illinois Tools: NP Junction: Long-Base Depletion Approximation

The NP Junction: Long-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of multiple variables.

Optical Beam Focusing System

Generate Focused optical beams using principles of electromagnetic optics.

Quantum and Semi-classical Electrostatics Simulation of SOI Trigates

Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure.

Rode's Method

Calculates low field mobility in III-V semiconductors.

SEST

Compute the strain effects on the thermal properties of bulk crystalline silicon.

NanoGromacs

Implementation of the popular molecular dynamics software suite GROMACS.