Nanohub Tools

NCN at Illinois Tools
A list of tools supported by NCN@Illinois.

NCN@Illinois Supported Educational Tools

Effect of Doping on Semiconductors
Nahil Sobh, Mohamed Mohamed
This tool is meant to complement the Solid State Electronic Devices Class at the University of Illinois at Urbana-Champaign.

Illinois Solid State Electronic Devices Classes Tools
Umberto Ravaioli, Nahil Sobh
This tool allows users to visualize the effects of doping on carrier concentration in bulk silicon.

NanoGromacs_Intro
Dairui Chen, Jay Mashl, Nahil Sobh, Desmond Soo Chin Yoong
Implementation of the popular molecular dynamics software suite GROMACS.

nanoJoule
Eric Pop, Yang Zhao
This tool performs a self-consistent simulation of the current-voltage curve of a metallic single-wall carbon nanotube with Joule heating.

PN Junction Long-Base Depletion Approximation
Nahil Sobh, Mohamed Mohamed
Depletion Approximation for a PN Junction.

Illinois Tools: PN Junction Short-Base Depletion Approximation
Nahil Sobh, Mohamed Mohamed
This model is valid under the assumption that the width of the n-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers.

NCN@Illinois Supported Research Tools

BioMOCA Suite
David Papke, Reza Toghraee, Umberto Ravaioli, Ankit Raj
Simulates ion flow through a channel.

Boltzmann Transport Simulator for CNTs
Zlatan Aksamija, Umberto Ravaioli
Simulate Electron transport in Single-walled carbon nanotubes using an upwinding discretization of the Boltzmann transport equation in the relaxation time approximation.

Carbon nanotube based fixed-fixed NEMS
Pradeep Kumar Gudla, Aswin Kannan, Zhi Tang, Narayan Aluru
Simulates pull-in behavior of Carbon nanotube based NEMS with fixed-fixed boundary conditions, with and without Vander Waal's effect.

Carbon nanotube based NEMS with cantilever structure
Pradeep Kumar Gudla, Aswin Kannan, Zhi Tang, Narayan Aluru
Simulates pull-in behavior of Carbon nanotube based NEMS with cantilever boundary conditions, with and without Vander Waal's effect.

Other Tools

BioMOCA
Reza Toghraee, Umberto Ravaioli
Ion channel simulator.

Bulk GaAs Ensemble Monte Carlo
Mohamed Mohamed, Anjali Bharthuar, Umberto Ravaioli
Basic Ensemble Monte Carlo code for study of electron transport in bulk GaAs.

CENEMS
Gang Li, Narayan Aluru
Computes the surface charge density distribution on the surface of the conductors in a multiconductor system.

CGTB
Yang Xu, Narayan Aluru
Compute the charge density distribution and potential variation inside a MOS structure.

CNT Mobility
Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field.

CNTphonons
Marcelo Kuroda, Salvador Barraza-Lopez, J.P. Leburton
Calculates the phonon band structure of carbon nanotubes using the force constant method.

Cyber-Infrastructure for Imaging and Simulation of Molecular and Cellular Mechanics (CISMCM)
Raheem Syed, Umberto Ravaioli, Gabriel Popescu, Nahil Sobh
A simulation-driven science project to understand the inner workings of cellular structures and biological systems, and to design detection and manipulation devices for a wide range of applications in nano-medicine and nano-biotechnology.

FIONA
Paul R. Selvin, Raheem Syed, Nahil Sobh
Fluorescence Imaging with One Nanometer Accuracy.

Illinois ABE 446 Lecture 1: Introduction/What is nanotechnology?
Kaustubh Bhalerao
A brief introduction to nanotechnology, from a bio-nano perspective.

Illinois ECE 440: Solid State Electronic Devices
Eric Pop
The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

Illinois ECE 440: Solid State Electronic Devices Homework Assignments (Fall 2009)
Mohamed Mohamed
Homework assignments for the Fall 2009 teaching of Illinois ECE 440: Solid State Electronic Devices.

Illinois Tools: Basic Bulk Silicon Transport Data at 300K
Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh
This module calculates the transport data of impurity-doped silicon at 300K in order to enhance the learning experiences for those studying introductory Solid State Devices.

Illinois Tools: MOCA
Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh
2D Full-band Monte Carlo Simulation of SOI Device Structures.

Illinois Tools: Multigrid Tutorial
Nahil Sobh
Solve the 2d Poisson Equation on a unit square and explore the effect of different parameters on the convergence and quality of solution.

imageJ
Raheem Syed, Nahil Sobh, Umberto Ravaioli, Gabriel Popescu, Mohamed Mohamed
imageJ can display, edit, analyze, process, save and print 8-bit, 16-bit and 32-bit images. It can read many image formats.

NP Junction: Short-Base Depletion Approximation
Nahil Sobh, Mohamed Mohamed
This model is valid under the assumption that the width of the p-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers.

Low Field Mobility
Mohamed Mohamed, Anjali Bharthuar, Umberto Ravaioli
Calculates low field mobility in III-V semiconductors.

Illinois Tools: NP Junction: Long-Base Depletion Approximation
Nahil Sobh, Mohamed Mohamed
The NP Junction: Long-Base Depletion Approximation tool is used to approximately calculate, and then graph, the distribution in an n- and p-type junction of multiple variables.

Optical Beam Focusing System
Zuhaib Bashir Sheikh, Nahil Sobh
Generate Focused optical beams using principles of electromagnetic optics.

Quantum and Semi-classical Electrostatics Simulation of SOI Trigates
Hyung-Seok Hahm, Andres Godoy
Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure.

Rode's Method
Mohamed Mohamed, Anjali Bharthuar, Umberto Ravaioli
Calculates low field mobility in III-V semiconductors.

SEST
Zhi Tang, Huijuan Zhao, Narayan Aluru
Compute the strain effects on the thermal properties of bulk crystalline silicon.

NanoGromacs
Dairui Chen, Derrick Kearney, Jay Mashi, Nahil Sobh, Desmond Soo Chin Yoong
Implementation of the popular molecular dynamics software suite GROMACS.